Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures-Reference-Cited by-同舟云学术

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Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures

Published:2006-01 Issue:2 Volume:286 Page:345-349
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Triplett Gregory Edward,Brown April S.,May Gary S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Backside-illuminated InAs(1-x)Sb(x)-InAs narrow band photodectors;Cheung;Appl. Phys. Lett.,1977

2. Pseudomorphic In(0.53)Ga(0.47)As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature,;Broekaert;Appl. Phys. Lett.,1988

3. Type II Winterband cascade and vertical-cavity surface-emitting mid-IR lasers;Meyer;IEEE Proc.—Optoelectron.,1998

4. Strain relaxation in InAs/GaSb heterostructures;Bennett;Appl. Phys. Lett.,1998

5. Strain relaxation in high-mobility InAs inserted-channel heterostructures with metamorphic buffer;Mendach;Physica E,2002

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2. Extending device performance in photonic devices using piezoelectric properties;SPIE Proceedings;2013-12-07

3. AlGaSb Buffer Layers for Sb-Based Transistors;Journal of Electronic Materials;2010-06-12

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