Demonstration of the effects of interface strain on band offsets in lattice‐matched III‐V semiconductor superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103626
Reference17 articles.
1. Intrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction
2. Intrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction
3. Intrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction
4. Role of interface strain in a lattice-matched heterostructure
5. Interband tunneling in polytype GaSb/AlSb/InAs heterostructures
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1. Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells;physica status solidi (a);2007-02
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4. Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells;Applied Physics Letters;2002-06-24
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