Intrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100345
Reference4 articles.
1. Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P
2. Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistors
3. High‐resolution x‐ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas‐source molecular beam epitaxy
4. High‐resolution x‐ray diffraction studies of InGaAs(P)/InP superlattices grown by gas‐source molecular‐beam epitaxy
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