Silicide formation by reaction of Ta‐Ti thin films and a Si single crystal
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345427
Reference14 articles.
1. Silicide formation in thin cosputtered (titanium + silicon) films on polycrystalline silicon and SiO2.
2. Silicide formation in thin cosputtered (titanium + silicon) films on polycrystalline silicon and SiO2.
3. Refractory silicides of titanium and tantalum for low-resistivity gates and interconnects
4. MOS Compatibility of high-conductivity TaSi2/n+poly-Si gates
5. Kinetics of WSi2 formation in the thin‐film system W/PtSi/Si
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1. In situ X-ray diffraction analysis on the crystallization of amorphous Ti–Ni thin films;Scripta Materialia;2006-10
2. The barrier effect of a WxTa(1−x)nanolayer on formation of single-texture CoSi2on Si(1 0 0);Semiconductor Science and Technology;2006-07-12
3. Evolution of microstructure in Ti–Ta bilayer thin films on polycrystalline-Si and Si(001);Thin Solid Films;2004-11
4. The growth of CoSi2 thin film in Co/W/Si(100) multilayer structures;Solid State Communications;2003-11
5. In-Situ Studies of Silicide Formation in Ti-Ta Bilayer Thin Films on Poly-Si;MRS Proceedings;2002
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