The thermal stability of SiGe films deposited by ultrahigh‐vacuum chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349551
Reference33 articles.
1. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
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3. The structural stability of uncapped versus buried Si1−xGex strained layers through high temperature processing
4. Equilibrium critical thickness for Si1−xGexstrained layers on (100) Si
5. Misfit strain relaxation in GexSi1−x/Si heterostructures: The structural stability of buried strained layers and strained‐layer superlattices
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