Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing-Reference-Cited by-同舟云学术

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

Published:2021-11-28 Issue:20 Volume:130 Page:203101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cancellara Leonardo¹^ORCID,Markurt Toni¹,Schulz Tobias¹^ORCID,Albrecht Martin¹^ORCID,Hagedorn Sylvia²^ORCID,Walde Sebastian²,Weyers Markus²^ORCID,Washiyama Shun³^ORCID,Collazo Ramon³,Sitar Zlatko³^ORCID

Affiliation:

1. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany

2. Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA

Funder

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0065935

Reference26 articles.

1. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

2. Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing

3. Improvement mechanism of sputtered AlN films by high-temperature annealing

4. Stabilization of sputtered AlN/sapphire templates during high temperature annealing

5. Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence thermometry using broadband multi-peak detection in Eu2+/Eu3+-codoped oxygen-rich AlN film;Optical Materials;2024-03

2. Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates;Applied Physics Letters;2024-02-05

3. Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport;Semiconductor Science and Technology;2024-01-12

4. Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing;Materials Science in Semiconductor Processing;2023-11

5. Parasitic AlxOyNz surface defects on high-temperature annealed AlN and their role in hillock formation;Applied Physics Letters;2023-09-11