High electron mobility in pseudomorphic modulation‐doped In0.75Ga0.25As/InAlAs heterostructures achieved with growth interruptions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358879
Reference14 articles.
1. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
2. Achievement of exceptionally high mobilities in modulation-doped Ga1−xInxAs on InP using a stress compensated structure
3. Critical‐layer thickness of a pseudomorphic In0.8Ga0.2As heterostructure grown on InP
4. Growth modes and relaxation mechanisms of strained InGaAs layers grown on InP(001)
5. Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
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1. Self-Smoothening of an Ion-Beam-Sputtered Ag (100) Surface: Evolution of Surface Morphology Using RHEED;Metallurgical and Materials Transactions A;2018-07-20
2. Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier;Applied Physics A;2012-07-17
3. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures;Semiconductors;2011-09
4. Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields;Semiconductors;2011-06
5. Quantum transport in In0.75Ga0.25As quantum wires;Applied Physics Letters;2008-04-14
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