Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures-Reference-Cited by-同舟云学术

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Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

Published:2011-09 Issue:9 Volume:45 Page:1169-1172
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vasil’evskii I. S.,Galiev G. B.,Klimov E. A.,Požela K.,Požela J.,Jucienė V.,Sužiedėlis A.,Žurauskienė N.,Keršulis S.,Stankevič V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611090259.pdf

Reference23 articles.

1. B. K. Ridley, Phys. Rev. B 39, 5282 (1989).

2. R. Haupt and L. Wendler, Phys. Rev. B 44, 1850 (1991).

3. J. Požela, A. Namajūnas, K. Požela, and V. Jucienė, J. Appl. Phys. 81, 1775 (1997).

4. M. A. Stroscio and M. Dutta, Phonons in Nanostructures (Cambridge Univ. Press, Cambridge, 2001).

5. Yu. Požela, K. Požela, and V. Jucienė, Semiconductors 41, 1074 (2007).

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