Critical‐layer thickness of a pseudomorphic In0.8Ga0.2As heterostructure grown on InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104890
Reference8 articles.
1. Materials and Device Characteristics of Pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP High Electron Mobility Transistors
2. AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE
3. Elimination of the flux transients from molecular-beam epitaxy source cells following shutter operation
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