The origin of non‐Gaussian profiles in phosphorus‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663203
Reference9 articles.
1. Ion‐Implanted Phosphorous in Silicon: Profiles Using C‐V Analysis
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4. Crystal wafer orientation by proton channelling
5. Analysis of amorphous layers on silicon by backscattering and channeling effect measurements
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