Crystal wafer orientation by proton channelling-Reference-Cited by-同舟云学术

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Crystal wafer orientation by proton channelling

Published:1967-10 Issue:10 Volume:44 Page:880-881
ISSN:0950-7671
Container-title:Journal of Scientific Instruments
language:
Short-container-title:J. Sci. Instrum.

Author:

Dearnaley G,Wilkins M A

Publisher

IOP Publishing

Subject

General Medicine

Reference3 articles.

1. The penetration of energetic ions through the open channels in a crystal lattice

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Depth distribution of gallium ions implanted into silicon crystals;Applied Physics Letters;1975-07

2. The origin of non‐Gaussian profiles in phosphorus‐implanted silicon;Journal of Applied Physics;1974-12

3. Channeling and related effects in the motion of charged particles through crystals;Reviews of Modern Physics;1974-01-01

4. Ion beam scattering applied to crystallography;Die Naturwissenschaften;1970-06

5. A positive ion camera for blocking and channeling studies;Nuclear Instruments and Methods;1970-06

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