Dependence of tribological behavior of GaN crystal on loading direction: A molecular dynamics study-Reference-Cited by-同舟云学术

Dependence of tribological behavior of GaN crystal on loading direction: A molecular dynamics study

Published:2019-08-21 Issue:7 Volume:126 Page:075108
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Qian Yu¹,Deng Shizhe¹,Shang Fulin¹,Wan Qiang²,Yan Yabin³

Affiliation:

1. StateKey Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace, Xi’an Jiaotong University, Xi’an 710049, Shaanxi, People’s Republic of China

2. Institute of System Engineering, China Academy of Engineering Physics, Mianyang 621900, Sichuan, People’s Republic of China

3. Laboratoryof Pressure Systems and Safety, Ministry of Education, East China University of Science and Technology, Shanghai 200237, People’s Republic of China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5093227

Reference87 articles.

1. HVPE GaN for high power electronic Schottky diodes

2. Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN

3. First-principles study on electronic and elastic properties of BN, AlN, and GaN