Free electron behavior in InN: On the role of dislocations and surface electron accumulation-Reference-Cited by-同舟云学术

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Free electron behavior in InN: On the role of dislocations and surface electron accumulation

Published:2009-01-12 Issue:2 Volume:94 Page:022109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Darakchieva V.,Hofmann T.,Schubert M.,Sernelius B. E.,Monemar B.,Persson P. O. Å.,Giuliani F.,Alves E.,Lu H.,Schaff W. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3065030

Reference23 articles.

1. Model for the thickness dependence of electron concentration in InN films

2. Origin of the n-type conductivity of InN: The role of positively charged dislocations

3. Sources of unintentional conductivity in InN

4. Intrinsic Electron Accumulation at Clean InN Surfaces

5. Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

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1. Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications;Advanced Materials Interfaces;2022-03-25

2. Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3;Journal of Applied Physics;2021-06-14

3. Growth kinetics and nanoscale structure-property relationships of InN nanostructures on GaN(0 0 0 1);Applied Surface Science;2021-01

4. Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy;Crystal Growth & Design;2020-02-20

5. Phonon Properties;Gallium Oxide;2020

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