Atomic layer deposited ZnxNi1−xO: A thermally stable hole selective contact for silicon solar cells
Author:
Affiliation:
1. School of Photovoltaic and Renewable Energy Engineering, UNSW Sydney, Sydney 2052, Australia
2. Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University, Doha 5825, Qatar
Funder
Qatar National Research Fund
Australian Renewable Energy Agency
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5056223
Reference45 articles.
1. p-type Mesoscopic Nickel Oxide/Organometallic Perovskite Heterojunction Solar Cells
2. Nickel Oxide Electrode Interlayer in CH3NH3PbI3Perovskite/PCBM Planar-Heterojunction Hybrid Solar Cells
3. A Low-Temperature, Solution-Processable, Cu-Doped Nickel Oxide Hole-Transporting Layer via the Combustion Method for High-Performance Thin-Film Perovskite Solar Cells
4. Perovskite-Based Solar Cells With Nickel-Oxidized Nickel Oxide Hole Transfer Layer
5. Carrier-Selective NiO/Si and TiO2/Si Contacts for Silicon Heterojunction Solar Cells
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