Atomic Layer Deposited Al1−xNixO: Low Contact Resistivity Hole‐Selective Contact for Crystalline Silicon Solar Cells

Author:

Hong Yang1,Kuang Xuanfei1,Chen Yongjuan1,Xiao Yao1,Liang Zongcun1ORCID

Affiliation:

1. Institute for Solar Energy Systems, School of Physics Sun Yat‐Sen University Guangzhou 510006 China

Abstract

Transition metal oxide (TMO)/crystalline silicon (c‐Si) junction‐based heterostructure crystalline silicon solar cells have emerged as a promising alternative to traditional silicon solar cells. However, the power conversion efficiency of c‐Si solar cells utilizing a nickel oxide (NiOx) hole transport layer (HTL) still lags behind those employing a fully developed TMO layer. This disparity may be attributed, at least in part, to inefficient hole extraction. Atomic layer deposited (ALD) aluminum nickel oxide (Al1xNixO) films, synthesized using bis(N,N′‐di‐t‐butylacetamidinato)nickel(II) (NiAMD) and trimethylaluminum (TMA) as precursors, along with deionized water as a co‐reactant, have been observed to improve the contact properties with p‐type silicon compared to NiOx. Al1−xNixO films with varying Al concentrations (0.25, 0.44, and 0.87) are examined for their contact performance on p‐Si, resulting in the lowest contact resistivity of 85 mΩ cm2. Optimized Al1xNixO films exhibit superior hole extraction capability from p‐type silicon, leading to a remarkable conversion efficiency of 19.35% in the constructed p‐Si/Al1xNixO/Ag solar cell. These findings underscore the advantages of utilizing ALD Al1xNixO as a hole‐selective contact for crystalline p‐Si solar cells.

Funder

Key Technologies Research and Development Program

Natural Science Foundation of Guangdong Province

Publisher

Wiley

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