The effect of reabsorbed radiation on the minority‐carrier diffusion length in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89337
Reference10 articles.
1. Spontaneous Radiative Recombination in Semiconductors
2. Use of Schottky‐diode collectors for SEM determination of bulk diffusion lengths
3. Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs
4. Quantum Efficiency and Radiative Lifetime of the Band-to-Band Recombination in Heavily Dopedn-Type GaAs
5. Photon recycling in semiconductor lasers
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2. Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures;Japanese Journal of Applied Physics;1997-10-15
3. Photon recycling as the dominant process of luminescence generation in an electron beam excited n-InP epilayer grown on an -InP substrate;Semiconductor Science and Technology;1996-05-01
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