Quantum Efficiency and Radiative Lifetime of the Band-to-Band Recombination in Heavily Dopedn-Type GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.6.1355/fulltext
Reference20 articles.
1. Radiative recombination from GaAs directly excited by electron beams
2. Optical Properties of n‐Type GaAs. III. Relative Band‐Edge Recombination Efficiency of Si‐ and Te‐Doped Crystals before and after Heat Treatment
3. Spontaneous and Stimulated Recombination Radiation in Semiconductors
4. Theory of the Band Structure of Very Degenerate Semiconductors
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