Effects of substrate temperature and annealing temperature on the formation and properties of erbium silicide layers synthesized by high current Er ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1573346
Reference21 articles.
1. Epitaxial growth of rare‐earth silicides on (111) Si
2. Fabrication and structure of epitaxial Er silicide films on (111) Si
3. Electronic transport properties of epitaxial erbium silicide/silicon heterostructures
4. Erbium silicide films on (100) silicon, grown in high vacuum. Fabrication and properties
5. Transport and near‐infrared optical properties of ErSi2thin films
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1. Effect of excess Pb on ferroelectric characteristics of conductive Al-doped ZnO and Sn-doped In2O3 top electrodes in PbLaZrTiO x capacitors;International Journal of Materials Research;2015-01-07
2. Yttrium silicide films into Si(111) — Fabrication and properties;Superlattices and Microstructures;2009-04
3. Probing the ErSi[sub 1.7] Phase Formation by Micro-Raman Spectroscopy;Journal of The Electrochemical Society;2007
4. Dose-dependent precipitate evolution arising during implantation of Er into Si;Journal of Applied Physics;2005-04-15
5. Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors;Materials Science and Engineering: B;2004-12
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