Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor
2. Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs
3. High-performance p-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions
4. Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistors
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1. 25.7% efficient PERC solar cell using double side silicide on oxide electrostatically doped (SILO-ED) carrier selective contacts: process and device simulation study;Semiconductor Science and Technology;2023-03-24
2. Integrated Er/Si Schottky Photodetectors on the end facet of optical waveguides;Journal of the European Optical Society-Rapid Publications;2020-03-10
3. Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions;Sensors;2018-11-03
4. RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs;Solid-State Electronics;2012-07
5. Electronic Transport of Lateral PtSi/n/n+-Si Schottky Diodes;Journal of Nanoscience and Nanotechnology;2012-07-01
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