Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InN∕GaN heterojunction: Measurement of “intrinsic” band lineup
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2913204
Reference13 articles.
1. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
2. Polarization-induced valence-band alignments at cation- and anion-polar InN∕GaN heterojunctions
3. Universal alignment of hydrogen levels in semiconductors, insulators and solutions
4. Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature
5. Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c plane
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