Carrier density and mobility modifications of the two-dimensional electron gas due to an embedded AlN potential barrier layer in AlxGa1−xN∕GaN heterostructures-Reference-Cited by-同舟云学术

Carrier density and mobility modifications of the two-dimensional electron gas due to an embedded AlN potential barrier layer in AlxGa1−xN∕GaN heterostructures

Published:2005-05-15 Issue:10 Volume:97 Page:103721
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim T. W.,Choo D. C.,Yoo K. H.,Jung M. H.,Cho Y. H.,Lee Jae-Hoon,Lee Jung-Hee

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1904152

Reference16 articles.

1. The Blue Laser Diode

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN

4. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

5. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

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