Bias Current Modulation of DC and RF Properties of AlmGa1‐m∼GaN Heterojunction IMPATT at Sub‐Millimeter Wave Frequency

Abstract

AbstractLarge signal RF properties of double drift region (DDR) Impact Avalanche Transit Time (IMPATT) device based on AlmGa1‐m∼GaN heterojunction (HT) are investigated and their variation with bias currents has been presented here. These RF properties and their modulation will significantly validate the acceptability of the particular HT in the sub‐millimeter wave frequency domain. Avalanche noise plays the prime ground for making the IMPATT diode basically noisy and tunneling decays the performance of the device, as we move towards the higher frequency range like the sub‐millimeter frequency. These setbacks can be done with if the homojunction (HM) is replaced by heterojunction. This authenticates the choice of heterojunction over homojunction. Here, the author takes 500 GHz as the frequency of concern in the sub‐millimeter wave range. Here, two complementary heterojunctions of AlmGa1‐m∼GaN is taken with m = 0.4 or the mole fraction of Al in the alloy being 40% and their RF results are compared with two homojunctions of GaN and AlGaN for double drift region (DDR) IMPATT diode. Outcomes indicate that HT diodes surpass the high‐frequency performance of HM diodes if compared on the basis of dc to RF conversion efficiency and output power due to the influence of large amplitude ac signal. It is also observed that with increasing bias voltage dependent current, which is varied from 20 × 108 to 40 × 108 Am−2, the efficiency of conversion together with the power output increases. These results will be very important for further research in this domain.