Computer-aided studies on the microwave characteristics of InP/GaInAs and GaAs/GaInAs heterostructure single-drift-region impact avalanche transit time diodes-Reference-Cited by-同舟云学术

Computer-aided studies on the microwave characteristics of InP/GaInAs and GaAs/GaInAs heterostructure single-drift-region impact avalanche transit time diodes

Published:1994-08-14 Issue:8 Volume:27 Page:1719-1726
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Dash G N,Pati S P

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/27/i=8/a=021/pdf

Reference11 articles.

1. Si/SiGe heterostructure mitatt diode

2. Heterojunction impact avalanche transit-time diodes grown by molecular beam epitaxy

3. Impact ionization coefficients of electrons and holes in

4. High efficiency GaInAs/InP heterojunction IMPATT diodes

5. MITATT mode in DDR heterostructure Impatt

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