Determination of trapped charge emission rates from nonexponential capacitance transients due to high trap densities in semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333064
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1. Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
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3. Recombination-Generation and Optical Properties of Gold Acceptor in Silicon
4. Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique
5. A new method for the determination of dopant and trap concentration profiles in semiconductors
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