Reverse current transport mechanism in shallow junctions containing silicide spikes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1521511
Reference8 articles.
1. A study of the leakage mechanisms of silicidedn+/pjunctions
2. Soft breakdown in titanium-silicided shallow source/drain junctions
3. Leakage mechanisms of titanium silicidedn+/pjunctions fabricated using rapid thermal processing
4. Characterization of shallow silicided junctions for sub-quarter micron ULSI technology. Extraction of silicidation induced Schottky contact area
5. A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]
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1. Metal silicides in advanced complementary metal-oxide-semiconductor (CMOS) technology;Metallic Films for Electronic, Optical and Magnetic Applications;2014
2. NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height;Journal of Applied Physics;2013-01-07
3. The Leakage Mechanism Study of Hump Reverse Current Observed in n+/p Salicided Junction;Advanced Materials Research;2011-09
4. High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions;Journal of The Electrochemical Society;2011
5. Characterizations of NiSi2-Whisker Defects in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with <110> Channel on Si(100);Japanese Journal of Applied Physics;2010-12-20
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