Affiliation:
1. Shanghai University of Electric Power
Abstract
We have observed a hump structure in reverse current-voltage curve of n+/p shallow diode for both area and perimeter structures fabricated with the CMOS technology using cobalt (Co) salicide. Through analyzing the ratio of abnormal to inherent leakage current dependency on the applied voltage and temperature, we confirm that the leakage path is originated from the touch of CoSi points to barrier edge of the n+/p diode. Moreover, for perimeter structures, this leakage path exists both in the areal and peripheral region with a movable border between them.
Publisher
Trans Tech Publications, Ltd.
Reference5 articles.
1. K. Goto, A. Fushida, J. Watanabe, T. Sukegawa, K. Kawamura, T. Yamazaki and T. Sugii, in IEDM Tech. Dig, vol. 95 (1995), p.449.
2. H. C. Cheng, M. H. Juang, C. T. Lin and L. M. Huang, IEEE Trans. Electron Device Lett., vol. 15 (1994), p.342.
3. A. Steegen, A. Lauwers, M. de Potter, G. Badenes, R. Rooyackers and K. Maex, Symp. VLSI Tech. Dig. Technol. Papers, vol. 18 (2000), p.180.
4. J. Choi, T. Y. Seong, K. M. Lee, J. H. Lee, Y. J. Park and H. D. Lee, IEEE Electron Devices Lett., vol. 23 (2002), p.188.
5. Z. Chi, W. D. Wang, S. J. Chua and S. Ashok, J. Appl. Phys., vol. 92 (2002), p.7532.