Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer-Reference-Cited by-同舟云学术

Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer

Published:2016-06 Issue:6 Volume:6 Page:065224
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wang Xing¹,Liu Hongxia¹^ORCID,Fei Chenxi¹,Zhao Lu¹,Chen Shupeng¹,Wang Shulong¹

Affiliation:

1. Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4955001

Reference28 articles.

1. LaAlO3/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

2. Equivalent Oxide Thickness Reduction for High-k Gate Stacks by Optimized Rare-Earth Silicate Reactions

3. Rare-earth oxide thin films for gate dielectrics in microelectronics

4. Introduction of New Materials into CMOS Devices

5. Band offsets of La2O3 films on Ge substrates grown by radio frequency magnetron sputtering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Experimental Study of the Cerium Dioxide - Silicon Interface of MIS Structures;VISNYK NTUU KPI SER-;2021

2. Alternate lanthanum oxide/silicon oxynitride-based gate stack performance enhancement due to ultrathin oxynitride interfacial layer for CMOS applications;Journal of Materials Science: Materials in Electronics;2019-12-16

3. Dielectric ceramics/TiO2/single-crystalline silicon nanomembrane heterostructure for high performance flexible thin-film transistors on plastic substrates;RSC Advances;2019

4. Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules;Journal of Applied Physics;2018-11-21

5. Solution-processed stacked TiO2 and Al2O3 dielectric layers for high mobility thin film transistor;AIP Advances;2018-08