Solution-processed stacked TiO2 and Al2O3 dielectric layers for high mobility thin film transistor-Reference-Cited by-同舟云学术

Solution-processed stacked TiO2 and Al2O3 dielectric layers for high mobility thin film transistor

Published:2018-08 Issue:8 Volume:8 Page:085109
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Jiang Shu¹,Yang Xiang¹,Zhang Jianhua¹,Li Xifeng¹^ORCID

Affiliation:

1. Key Laboratory of Advanced Display and System Application (Ministry of Education), Shanghai University, No. 149 Yanchang Road, Shanghai 200072, China

Funder

National Key Technologies Research and Development Program of China

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5034497

Reference17 articles.

1. Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

2. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

3. Temperature dependence of electrical properties for MOS capacitor with HfO2/SiO2 gate dielectric stack

4. Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films

5. Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer

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3. Electrical response of CdSe-based thin film transistors with different hybrid dielectric gates;Journal of Physics D: Applied Physics;2021-03-22

4. Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor;Coatings;2020-03-18

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