Channeling studies of radiation damage in metal‐silicides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89818
Reference5 articles.
1. Effet de l'irradiation par les neutrons sur les alliages uranium-fer a faible teneur en fer
2. The simulation of fission damage in U3Si
3. Characterization of polycrystalline layers by channelling measurements
4. Epitaxial Growth of Nickel Silicide NiSi2on Silicon
5. Mass Dependence of Critical Amorphizing Dose in Ion Implantation
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. MeV metal ion implantations for buried layer fabrication in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-02
2. Damage production and annealing in28Si‐implanted CoSi2/Si(111) heterostructures;Journal of Applied Physics;1992-01-15
3. Amorphization and recrystallization of epitaxial ReSi2films grown on Si(100);Applied Physics Letters;1991-04-29
4. Amorphization and regrowth in Si/CoSi2/Si heterostructures;Journal of Applied Physics;1990-12
5. Radiation damage in ReSi2by a MeV4He beam;Applied Physics Letters;1990-10-15
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