Epitaxial Growth of Nickel Silicide NiSi2on Silicon-Reference-Cited by-同舟云学术

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Epitaxial Growth of Nickel Silicide NiSi2on Silicon

Published:1974-01-01 Issue:S1 Volume:13 Page:669
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tu King-Ning,Alessandrini Eileen I.,Chu Wei-Ken,Krautle Hubert,Mayer James W.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/13/i=S1/a=669/pdf

Cited by 82 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing;Langmuir;2021-12-03

2. Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation;Applied Surface Science;2021-02

3. Formation and crystallographic orientation of NiSi2–Si interfaces;Journal of Applied Physics;2020-08-28

4. Effects of Ni Film Thickness on the Properties of Ni-Based Silicides Formed on Both Highly Doped n- and p-Si Substrate;ECS Journal of Solid State Science and Technology;2020-02-19

5. On-site growth method of 3D structured multi-layered graphene on silicon nanowires;Nanoscale Advances;2020

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