Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1327288
Reference20 articles.
1. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
2. Violet‐blue GaN homojunction light emitting diodes with rapid thermal annealed p‐type layers
3. Study of GaN thin layers subjected to high-temperature rapid thermal annealing
4. Thermal stability of GaN investigated by Raman scattering
5. Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering
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1. Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation;Applied Physics Express;2020-05-07
2. Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement;Materials Today: Proceedings;2018
3. Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence;Optical Materials;2016-10
4. Below-gap emission bands in undoped GaN and its excitation density dependence;physica status solidi (c);2015-12-09
5. A direct evidence of allocating yellow luminescence band in undoped GaN by two-wavelength excited photoluminescence;Applied Physics Letters;2015-11-23
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