Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123141
Reference13 articles.
1. Gain characteristics of InGaN/GaN quantum well diode lasers
2. Gain characteristics of InGaN/GaN quantum well diode lasers
3. Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature
4. Thermal stability of GaN investigated by Raman scattering
5. Morphology and photoluminescence improvements from high‐temperature rapid thermal annealing of GaN
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