Morphology and photoluminescence improvements from high‐temperature rapid thermal annealing of GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.116459
Reference17 articles.
Cited by 97 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Mid-wave infrared photoluminescence from low-temperature-grown PbSe epitaxial films on GaAs after rapid thermal annealing;Applied Physics Letters;2023-09-25
2. Atomically resolved study of the unpinned GaN ( 101¯0 ) surface by cross-sectional scanning tunneling microscopy;Physical Review B;2023-08-15
3. Research progress in the postprocessing and application of GaN crystal;CrystEngComm;2023
4. Non-polar a-plane AlN epitaxial films on r-plane sapphire with greatly reduced defect densities obtained by high-temperature annealing;Journal of Crystal Growth;2022-11
5. In situ spectral reflectance analysis of the early stages of GaN thermal decomposition;Optik;2022-09
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