A direct evidence of allocating yellow luminescence band in undoped GaN by two-wavelength excited photoluminescence-Reference-Cited by-同舟云学术

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A direct evidence of allocating yellow luminescence band in undoped GaN by two-wavelength excited photoluminescence

Published:2015-11-23 Issue:21 Volume:107 Page:212102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Julkarnain M.¹²^ORCID,Fukuda T.¹,Kamata N.¹,Arakawa Y.³

Affiliation:

1. Department of Functional Materials Science, Saitama University, Saitama 338-8570, Japan

2. Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi 6205, Bangladesh

3. Institute of Industrial Science, University of Tokyo, Tokyo 153-8505, Japan

Funder

JSPS KAKENHI

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936243

Reference30 articles.

1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

2. Mechanism of Yellow Luminescence in GaN

3. Characterization of undoped and Si-doped bulk GaN fabricated by hydride vapor phase epitaxy

4. Intensity dependence of photoluminescence in GaN thin films

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1. Comparison of Defects in Hydride Vapor Phase Epitaxy-Grown GaN Films under Different V/III Ratios and the Influence on the Electrical and Optical Properties;International Journal of Electrochemical Science;2020-12

2. Spectroscopy of Nonradiative Recombination Levels by Two‐Wavelength Excited Photoluminescence;physica status solidi (b);2020-11-27

3. Effect of carrier drift-diffusion transport process on thermal quenching of photoluminescence in GaN;Journal of Physics D: Applied Physics;2020-11-11

4. Temperature dependence of nonradiative recombination processes in UV-B AlGaN quantum well revealed by below-gap excitation light;Optical Materials;2020-07

5. Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light;AIP Advances;2020-03-01

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