Diffusion mechanisms of indium and nitrogen during the annealing of InGaAs quantum wells with GaNAs barriers and GaAs spacer layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1900298
Reference23 articles.
1. GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
2. GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
3. Molecular beam epitaxy of GaNAs and GaInNAs
4. Growth-temperature-dependent (self-)annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells
5. Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
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1. X-ray photoelectron spectroscopy analysis of TlInGaAsN semiconductor system and their annealing-induced structural changes;Journal of Applied Physics;2010-12-15
2. Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy;Applied Physics Letters;2007-11-05
3. Interdiffusion in narrow InGaAsN∕GaAs quantum wells;Journal of Applied Physics;2007-05-15
4. Post-Annealing Effects on Emission Characteristics of InAs Quantum Dots on GaNAs Buffer Layer;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05
5. Structural and optical properties of GaInAs∕GaAs and GaInNAs∕GaNAs multiple quantum wells upon postgrowth annealing;Applied Physics Letters;2006-05
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