Solid-phase epitaxy of amorphous Si using single-crystalline Si nanowire seed templates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2817601
Reference18 articles.
1. Epitaxial growth of Si deposited on (100) Si
2. Solid‐state epitaxial growth of deposited Si films
3. Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements
4. Effect of structure and impurities on the epitaxial regrowth of amorphous silicon
5. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
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1. Tensile-strained Ge1−x Sn x layers on Si(001) substrate by solid-phase epitaxy featuring seed layer introduction;Japanese Journal of Applied Physics;2024-04-01
2. Growth of high-crystallinity silicon films by a combination of intermittent pulse heating and plasma-enhanced chemical vapor deposition;Japanese Journal of Applied Physics;2022-06-13
3. Single crystal formation in micro/nano-confined domains by melt-mediated crystallization without seeds;Journal of Physics D: Applied Physics;2015-05-08
4. Crystallization in nano-confinement seeded by a nanocrystal—A molecular dynamics study;Journal of Applied Physics;2014-03-14
5. Control growth of silicon nanocolumns’ epitaxy on silicon nanowires;Journal of Nanoparticle Research;2013-03-17
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