Effect of structure and impurities on the epitaxial regrowth of amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91356
Reference7 articles.
1. Silicon epitaxy by solid‐phase crystallization of deposited amorphous films
2. Solid‐state epitaxial growth of deposited Si films
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4. Optical Evidence for a Network of Cracklike Voids in Amorphous Germanium
5. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
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3. Oxygen contamination of low temperature ultrahigh vacuum‐deposited Ge films on GaAs;Applied Physics Letters;1996-07-22
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