Structural changes during the switching transition of chalcogenide selector devices-Reference-Cited by-同舟云学术

Structural changes during the switching transition of chalcogenide selector devices

Published:2019-10-14 Issue:16 Volume:115 Page:163503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guo Yuzheng¹,Li Huanglong²,Zhang Wei³^ORCID,Robertson John⁴

Affiliation:

1. School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei 43072, China

2. Department of Precision Instrument, Tsinghua University, Beijing 100084, China

3. Department of Electronics and Electrical Engineering, Liverpool John Moores University, Liverpool L3 3AF, United Kingdom

4. Engineering Department, Cambridge University, Cambridge CB2 1PZ, United Kingdom

Funder

European Commission

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5125215

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3. Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film

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