A survey on techniques for improving Phase Change Memory (PCM) lifetime-Reference-Cited by-同舟云学术

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A survey on techniques for improving Phase Change Memory (PCM) lifetime

Published:2023-11 Issue: Volume:144 Page:103008
ISSN:1383-7621
Container-title:Journal of Systems Architecture
language:en
Short-container-title:Journal of Systems Architecture

Author:

Mohseni Milad^ORCID,Novin Ahmad Habibized

Publisher

Elsevier BV

Subject

Hardware and Architecture,Software

Reference301 articles.

1. Phase Change Memory;Noé;Device Physics, Reliability and Applications,2018

2. A survey on PCM lifetime enhancement schemes;Rashidi;ACM Computing Surveys (CSUR),2019

3. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials;Pirovano;IEEE Transactions on Electron Devices,2004

4. OUM-A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications;Lai,2001

5. Current status of the phase change memory and its future;Lai,2003

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ensuring consistent recovery under power failure with minimal NVM write overhead;Journal of Systems Architecture;2024-02

2. OML-PCM: optical multi-level phase change memory architecture for embedded computing systems;Engineering Research Express;2023-12-01

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