The multiple‐trapping model and hole transport in SiO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324248
Reference21 articles.
1. Hole and electron transport in SiO2 films
2. Charge transport studies in SiO2: Processing effects and implications for radiation hardening
3. Electron−hole pair creation energy in SiO2
4. Role Transport and Charge Relaxation in Irradiated SiO2 MOS Capacitors
5. Physical Mechanisms of Radiation Hardening of MOS Devices by Ion Implantation
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