Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1332827
Reference14 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor
3. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
4. Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts ton-type GaN
5. Low resistance bilayer Nd/Al ohmic contacts on n-type GaN
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