Defect spectroscopy and non-ionizing energy loss analysis of proton and electron irradiated p-type GaAs solar cells
Author:
Affiliation:
1. Airbus Defence and Space GmbH, 82024 Taufkirchen, Germany
2. Institute for Nanoelectronics, Technical University of Munich, 80333 Munich, Germany
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0028029
Reference25 articles.
1. Modeling solar cell degradation in space: A comparison of the NRL displacement damage dose and the JPL equivalent fluence approaches
2. Point defects and their reactions ine−-irradiated GaAs investigated by x-ray-diffraction methods
3. Computational simulation of threshold displacement energies of GaAs
4. Difference in space‐charge recombination of proton and electron irradiated GaAs solar cells
5. Direct Evaluation of Defect Distributions From Admittance Spectroscopy
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