Investigations of defect levels in different sized HgTe nanocrystals based photovoltaic devices using thermal admittance spectroscopy

Abstract

HgTe nanocrystals (NCs) have unique properties that make them suitable for optoelectronic devices in the mid-wave infrared (MWIR) and short-wave infrared regions. However, electrically active defects can trap charge carriers, reducing their mobility and diffusion length, which degrades the NCs’ optical and electrical properties. In this study, we used the thermal admittance spectroscopic (TAS) method to analyze defects in HgTe NC-based photovoltaic devices. The ITO/HgTe/Al device structure was used to study the defect levels in HgTe nanocrystals and the effect of these traps on transport properties. Using low-temperature I–V measurements, we calculated the trap activation energy as 0.14 eV, and the transport was found to occur mainly through these trap states. From the TAS measurements, the trap activation energy obtained was 0.14 eV, and the concentration of trap level was 3.16×1016cm−3eV−1. We have also fabricated ITO/TiO2/HgTe/Au and fluorine doped tin oxide/TiO2/HgTe/MoO3/Au devices and did TAS measurements to understand the effect of adding electron and hole extraction layer on the formation of defect levels. Intriguingly, a distinct reversal in the capacitance–frequency (C–F) behavior is observed at different temperatures, leading to positive slopes in the Arrhenius plot. This peculiar phenomenon is attributed to the size-dependent doping effects within the HgTe nanocrystals. The outcomes of this study shed light on the significance of understanding and quantifying electrically active defects in HgTe nanocrystals for the advancement of NC-based optoelectronic devices.