Direct Evaluation of Defect Distributions From Admittance Spectroscopy-Reference-Cited by-同舟云学术

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Direct Evaluation of Defect Distributions From Admittance Spectroscopy

Published:2014-11 Issue:6 Volume:4 Page:1665-1670
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Weiss Thomas Paul,Redinger Alex,Regesch David,Mousel Marina,Siebentritt Susanne

Funder

FNR

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/6928522/06915718.pdf?arnumber=6915718

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigations of defect levels in different sized HgTe nanocrystals based photovoltaic devices using thermal admittance spectroscopy;Journal of Applied Physics;2023-06-23

2. Impact of Na diffusion on Cu(In, Ga)Se2 solar cells: Unveiling the role of active defects using thermal admittance spectroscopy;Thin Solid Films;2023-02

3. Noise Spectroscopy: A Tool to Understand the Physics of Solar Cells;Energies;2023-01-26

4. Near surface defects: Cause of deficit between internal and external open‐circuit voltage in solar cells;Progress in Photovoltaics: Research and Applications;2021-10-12

5. Carrier recombination mechanism and photovoltage deficit in 1.7-eV band gap near-stoichiometric Cu(In,Ga) S2;Physical Review Materials;2021-05-21

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