Anisotropic strain relaxation in GaAs layers grown on Si(100) substrates by post‐growth patterning
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107752
Reference8 articles.
1. Tensile stress variations of chemically etched GaAs films grown on Si substrates
2. Selected-area GaAs epitaxial growth on Si free from detrimental sidewall interactions
3. Reduction of Thermal Stress in Mbe Grown GaAs/Si by Patterning
4. LEED study of the stepped surface of vicinal Si (100)
5. Selective Etching of Gallium Arsenide Crystals in H[sub 2]SO[sub 4]-H[sub 2]O[sub 2]-H[sub 2]O System
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence;Japanese Journal of Applied Physics;2012-06-20
2. Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence;Japanese Journal of Applied Physics;2012-06-01
3. Investigation of strain effects in selectively grown GaAs on Si;Journal of Crystal Growth;1994-12
4. Cathodoluminescence studies and finite element analysis of thermal stresses in GaAs/Si stripes;Journal of Applied Physics;1993-08-15
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