Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence-Reference-Cited by-同舟云学术

Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence

Published:2012-06-01 Issue:6S Volume:51 Page:06FG15
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Ling,Chien Kun-Feng,Fan Wen-Chung,Chou Wu-Ching,Ko Chih-Hsin,Wu Cheng-Hsien,Lin You-Ru,Wan Cheng-Tien,Wann Clement H.,Hsu Chao-Wei,Chen Yung-Feng,Su Yan-Kuin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference31 articles.

1. Monolithic integration of GaAs/AlGaAs LED and Si driver circuit

2. GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer

3. Direct integration of III–V compound semiconductor nanostructures on silicon by selective epitaxy

4. III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications

5. GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate

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