Cathodoluminescence studies and finite element analysis of thermal stresses in GaAs/Si stripes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354626
Reference27 articles.
1. Gallium arsenide and other compound semiconductors on silicon
2. Temperature effects on the photoluminescence of GaAs grown on Si
3. Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si
4. Stress variations due to microcracks in GaAs grown on Si
5. Stress variations and relief in patterned GaAs grown on mismatched substrates
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1. Thermal stress distribution in a laser array structure selectively grown on V-groove-patterned silicon;AIP Advances;2018-08
2. Effect of Different Patterns Epitaxial Lift-Off Process by Finite Element Method;ECS Transactions;2013-05-03
3. Strain-induced tuning of the emission wavelength of high quality GaAs/AlGaAs quantum dots in the spectral range of the 87Rb D2 lines;Applied Physics Letters;2011-10-17
4. Cathodoluminescence;Luminescence of Solids;1998
5. Polarized‐cathodoluminescence study of stress for GaAs grown selectively on patterned Si(100);Journal of Applied Physics;1994-09
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