AlGaAs/GaAs heterojunction bipolar transistor with a two‐dimensional electron gas emitter
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105909
Reference10 articles.
1. AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process
2. Double heterojunction NpN GaAlAs/GaAs bipolar transistor
3. Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor
4. Double heterojunction AlxGa1-xAs/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650
5. Transport and related properties of (Ga, Al)As/GaAs double heterostructure bipolar junction transistors
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1. Theoretical calculations to investigate thermodynamic properties of 2D electron gas in InP/InPBiN quantum structure;Results in Physics;2023-11
2. Minority carrier magneto‐oscillations in the bipolar quantum well resonant tunneling transistor;Journal of Applied Physics;1996-03
3. Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs;Solid-State Electronics;1995-10
4. Heterojunction bipolar transistors with emitter barrier lowered by /spl delta/-doping;IEEE Electron Device Letters;1994-08
5. Application of an emitter edge‐thinning technique to GaAs/AlGaAs double heterostructure‐emitter bipolar transistor;Applied Physics Letters;1992-09-21
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