Application of an emitter edge‐thinning technique to GaAs/AlGaAs double heterostructure‐emitter bipolar transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107563
Reference13 articles.
1. Numerical simulation of GaAs/GaAlAs heterojunction bipolar transistors
2. Consideration of the frequency performance potential of GaAs homojunction and heterojunction n-p-n transistors
3. Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor
4. Double heterojunction AlxGa1-xAs/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650
5. Transport and related properties of (Ga, Al)As/GaAs double heterostructure bipolar junction transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. GaAs/InGaAs/AlGaAs optoelectronic switch in avalanche heterojunction phototransistor vertically integrated with a resonant cavity;Applied Physics Letters;1994-01-24
2. Optical-gain enhancement in resonant-cavity heterojunction bipolar phototransistor through emitter-edge thinning;Electronics Letters;1993
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