Temperature‐dependent critical layer thickness for In0.36Ga0.64As/GaAs single quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104511
Reference27 articles.
1. Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
2. Optical characterization of pseudomorphic InxGa1−xAs–GaAs single‐quantum‐well heterostructures
3. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
4. Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures
5. Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
Cited by 68 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss;Bulletin of the Lebedev Physics Institute;2023-09
2. Fully-relaxed n-AlGaN on AlN / Al2O3 templates using strain-relaxed super-lattice buffer layers;Materials Chemistry and Physics;2022-11
3. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01
4. Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source;Journal of Crystal Growth;2017-11
5. Critical thickness of GaN on AlN: impact of growth temperature and dislocation density;Semiconductor Science and Technology;2017-06-28
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3